Si nanowire ion-sensitive field-effect transistors with a shared floating gate

摘要

Ion-sensitive field-effect transistors (ISFETs) arrayed in parallel were fabricated on a silicon-on-insulator substrate. Since the nanoscale wire channels of the ISFETs are bridged with a floating gate on which molecules are preferably immobilized, signals originating from charged materials only on the floating gate can appear and can therefore be distinguished from background noise, which leads to noise-robust sensing. Additionally, the nanoscale channels provide the ISFETs with single-electron-resolution charge sensitivity as well as a reduction in background noise induced in the wider channels used as electrical leads. These features promise the detection of a small number of molecules.