Edge-enhanced Raman scattering in Si nanostripes

摘要

We show both theoretically and experimentally that at the 364 nm excitation wavelength, the Raman signal is strongly enhanced within a local (<20 nm wide) area at the Si stripe edge when both incident and scattered lights are polarized parallel to the stripe. This enhancement effect results from a high concentration of the light electric field at the stripe edge and allows single nanowire Raman measurement as well as local stress detection at the stripe edges in Si device structures.