Shape transition in very large germanium islands on Si(111)

摘要

Ge islands with areas up to hundreds of μm~2 were grown on Si(111). These islands, grown above 750 ℃ and at a deposition rate of 1 monolayer/min, become decreasingly compact with increasing size and can have nonuniform cross sections with heights reaching over 500 nm. The largest islands are ramified, often comprising multiple discrete parts. X-ray photoemission electron microscopy absorption maps show that the islands have a higher concentration of Ge at their centers, with more Si near the edges. We propose that the shape transformation is driven by strain relief at the island perimeters.