机译:SiC基座微波退火非晶硅膜的晶化
Department of Materials Science and Engineering, National Tsing Hua University, HsinChu 30013, Taiwan;
Materials and Chemical Engineering Laboratory, Industrial Technology Research Institute, Chutung 31000, Taiwan;
Department of Physics, National Tsing Hua University, HsinChu 30013, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University, HsinChu 30013, Taiwan Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan;
机译:以碳覆盖层为感受器的非晶硅膜的微波晶化
机译:微波沉积后退火对非晶态氢化钙钛矿结晶的影响。三维钨和二维氧化钼膜的情况
机译:微波退火增强了铝诱导的非晶硅薄膜的横向结晶
机译:微波退火的Ni诱导非晶硅膜的横向快速结晶
机译:离子注入硅的感受器辅助微波退火。
机译:在3C-SiC(111)/ Si(111)基板上进行ZnO(002)薄膜的RF溅射退火后处理和表征
机译:SiC基座微波退火非晶硅膜的晶化