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首页> 外文期刊>Applied Physicsletters >Population inversion induced by Landau-Zener transition in a strongly driven rf superconducting quantum interference device
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Population inversion induced by Landau-Zener transition in a strongly driven rf superconducting quantum interference device

机译:强驱动射频超导量子干涉装置中由Landau-Zener跃迁引起的粒子数反转

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摘要

Microwave resonances between discrete macroscopically distinct quantum states with single photon and multiphoton absorption are observed in a strongly driven radio frequency superconducting quantum interference device flux qubit. The amplitude of the resonant peaks and dips are modulated by the power of the applied microwave irradiation and a population inversion is generated at low flux bias. These results, which can be addressed with Landau-Zener transition, are useful to develop an alternative means to initialize and manipulate the flux qubit, as well as to do a controllable population inversion used in a micromaser.
机译:在强烈驱动的射频超导量子干涉装置通量量子位中,观察到具有单光子和多光子吸收的离散的宏观不同量子态之间的微波共振。共振峰和谷的振幅由所施加的微波辐射的功率调制,并且在低通量偏置下会产生总体反转。这些结果可以用Landau-Zener转换解决,可用于开发一种替代方法来初始化和操纵通量量子位,以及进行微激子中可控的总体反转。

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  • 来源
    《Applied Physicsletters》 |2009年第10期|157-159|共3页
  • 作者单位

    Department of Electronic Science and Engineering, Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, People's Republic of China;

    Department of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Department of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Department of Electronic Science and Engineering, Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, People's Republic of China;

    Department of Electronic Science and Engineering, Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, People's Republic of China;

    Department of Electronic Science and Engineering, Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, People's Republic of China;

    Department of Electronic Science and Engineering, Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, People's Republic of China;

    Department of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Department of Electronic Science and Engineering, Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, People's Republic of China Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, USA;

    Department of Electronic Science and Engineering, Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, People's Republic of China;

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  • 正文语种 eng
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