High hole mobility in boron doped diamond for power device applications

摘要

Low boron doped homoepitaxial diamond layers were grown on Ib (100) diamond substrates with oxygen added to the gas mixture. The acceptor density of the samples has been estimated by C(V) and Hall effect to lie close to 10~(16) cm~(-3) with a maximum low field Hall mobility value of 1870 cm~2/V s at 292 K. The presence of oxygen in the gas phase is shown to be a key parameter to obtain such characteristics. The mobility parameters required to simulate the electrical behavior of devices between 300 K and 500 K are then determined for a wide doping range.