Patterns of assembled Fe_3O_4 nanoparticles on Si(111) wafer were formed by the self-assembly technique. Three factors, concentration of the Fe_3O_4 nanoparticles solution, dosage of the solution, and temperature of the Si wafer, were found to affect the quality of the Fe_3O_4 nanoparticle patterns. The prepared Si(111) wafer was used as the substrate to grow the patterned boron nanowires by thermoreduction method. Furthermore, a notable field emission property with moderate turn on field was obtained on the patterned boron nanowires. Our results indicate that the patterned boron nanowires have a great potential of applications in flat plane display and electron emission nanodevices.
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