Single electron charging in deterministically positioned InAs/lnP quantum dots

摘要

We demonstrate precise control of electron charging within a single deterministically positioned InAs/lnP quantum dot emitting in the telecommunications band around 1500 nm. Photolumine-scence emission as a function of vertical electric field is used to monitor the electron number within the dot. From Stark shift spectroscopy, we extract strength and orientation for the built-in dipole moment that suggests a uniform InAs dot composition and a configuration in which the electron lies above the hole at zero electric field. The scalable gating technology we employ to electrically contact individual prepositioned quantum dots promises arrays of initialized single spins that can be used for fiber-based quantum information applications.