Characterization of silicon-on-insulator films with pseudo-metal-oxide- semiconductor field-effect transistor: Correlation between contact pressure, crater morphology, and series resistance

摘要

Pseudo-metal-oxide-semiconductor field-effect transistor (Ψ-MOSFET) is a simple and efficient technique for characterizing electrical properties of silicon-on-insulator wafers. The primary condition for reliable parameter extraction is to achieve ohmic contacts between Ψ-MOSFET probes and silicon film. This paper brings experimental arguments on the probe-pressure impact on contact nature, series resistance, and carrier mobility. The specificity of our study consists of the topographical analysis (by atomic force microscopy) of craters induced by the probes. We correlate the probe-pressure with morphology parameters (size of craters) and electrical parameters (series resistance, mobility). For higher pressures, contacts are improved, changing from Schottky-like to ohmic-like.