High-yield dielectrophoretic assembly of two-dimensional graphene nanostructures

摘要

Graphene handling is still dominated by serial mechanical exfoliation, which may well facilitate measurements in a laboratory environment but does not allow reliable larger-scale integration. Herein we demonstrate the controlled, high-yield (> 90%), site-selective deposition of ultrathin few-layer (three to ten) graphene oxide by dielectrophoresis between prefabricated electrodes. Individual layers are found near the edges. Initially insulating, thermal reduction at 450 ℃ thins out the two-dimensional few-atom thick films and dramatically reduces electrical resistances down to 40 kΩ. Conductivities between 15 and 36 S/cm are obtained. The introduced method permits the nonintrusive, parallel, large-scale assembly of soluble two-dimensional nanostructures and sheets.