Waveguiding-assisted random lasing in epitaxial ZnO thin film

摘要

Zinc oxide thin films were grown on c-sapphire substrates using pulsed laser deposition. Pump power dependence of surface emission spectra, acquired using a quadrupled 266 nm laser, revealed room temperature stimulated emission (threshold of 900 kW/cm~2). Time dependent spectral analysis plus gain measurements of single-shot, side-emission spectra pumped with a nitrogen laser revealed random lasing indicative of the presence of self-forming laser cavities. It is suggested that random lasing in an epitaxial system rather than a three-dimensional configuration of disordered scattering elements was due to waveguiding in the film. Waveguiding causes light to be amplified within randomly formed closed-loops acting as lasing cavities.