Surface plasmon enhanced UV emission in AIGaN/GaN quantum well

摘要

The surface plasmon (SP) energy for resonant enhancement of light has shown to be modified by the epitaxial substrate and the overlying metal thin film. The modification of SP energy in AIGaN/GaN epitaxial layers is studied using spectroscopic ellipsometry for enhanced UV-light emission. Silver induced SP can be extended to the UV wavelength range by increasing the aluminum concentration in Al_xGa_(1-x)N epilayer. A threefold increase in the UV-light emission is observed from AIGaN/GaN quantum well due to silver induced SP. Photoluminescence lifetime measurements confirm the resonant plasmon induced increase in Purcell factor as observed from the PL intensity measurements.