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机译:硅化镍/硅/硅化镍纳米线异质结构的受控大应变及其电子传输性能
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Materials Science and Engineering, National Cheng Kung-University, Tainan 701, Taiwan;
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Physics, Tarn Kang University, Taipei 251, Taiwan;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095-1595, USA;
Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095-1595, USA;
机译:硅化镍纳米线的形成及场发射特性的观测
机译:通过直接硅化镍箔来控制硅化物纳米线阵列的生长和场发射特性
机译:通过Ni和电子束光刻之间的固态反应通过Ni和电子束光刻中的镍硅化物纳米线的线宽和生长行为制备Si纳米线
机译:CMOS集成RTP要求的双重功函数相控Ni-FUSI(完全硅化)栅极同时在HfSiON上同时硅化nMOS(NiSi)和pMOS(富Ni硅化物)栅极
机译:硅(001)上稀土硅化物的结构和电子特性:纳米线和三维岛。
机译:通过掠角沉积和固态反应制备镍硅化物/硅异质结构纳米线阵列
机译:Fabrication of Ni-silicide/si heterostructured nanowire arrays by glancing angle deposition and solid state reaction