机译:GaN_(1-x)Bi_x:高度不匹配的半导体合金
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;
rnMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom;
rnMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;
rnSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom;
rnMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;
rnMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;
rnMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
机译:GaN_(1-x)Bi_x合金的结构参数和转变压力的第一性原理计算
机译:的 结构 参数 和 GaN_ ( 1-X) Bi_x 合金的 过渡 压力 第一 原理计算
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机译:中国带隙缩小与定位的配置依赖性 稀释Gaas_ {1-x} Bi_x合金
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