Carrier recombination mechanisms and efficiency droop in GalnN/GaN light-emitting diodes

摘要

We model the carrier recombination mechanisms in GalnN/GaN light-emitting diodes as R=An +Bn~2+Cn~3+f(n), where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10~(-29) cm~6 s~(-1). Comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.