首页> 外文OA文献 >Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

【2h】

Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

机译：AlGaN深紫外发光二极管的温度依赖性载体重组和效率下垂

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Zhangbao Peng; Weijie Guo; Tingzhu Wu; Ziquan Guo; Yijun Lu; Yicheng Zheng; Yue Lin; Zhong Chen;
展开▼
作者单位

展开▼
年度 2020
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes [J] . Peng Zhangbao, Guo Weijie, Wu Tingzhu, Photonics Journal, IEEE . 2020,第1期

机译：AlGaN深紫外发光二极管的温度依赖性载体重组和效率下垂
2. Nearly Efficiency-Droop-Free AlGaN-Based Deep-Ultraviolet Light-Emitting Diode Without Electron-Blocking Layer [J] . Hongfeng Jia, Huabin Yu, Zhongjie Ren, Journal of Electronic Packaging . 2020,第3期

机译：近乎效率 - 无杆的基于Algan的深层紫外线发光二极管，没有电子阻挡层
3. Efficiency droop enhancement in AlGaN deep ultraviolet light-emitting diodes by making whole barriers but the bottom Mg doped [J] . Jie Sun, Huiqing Sun, Xinyan Yi, Superlattices and microstructures . 2016,第sepa期

机译：通过制作整个势垒但掺杂底部Mg来提高AlGaN深紫外发光二极管的效率下降
4. Strong correlation between efficiency and carrier recombination processes in efficiency droop of GaN based light-emitting diodes [C] . Yang-Seok Yoo, Jong-Ho Na, Sung Jin Son, Conference on Lasers and Electro-Optics Pacific Rim . 2015

机译：GaN基发光二极管效率下降中效率与载流子复合过程之间的强相关性
5. Investigating and Optimizing Carrier Transport, Carrier Distribution, and Efficiency Droop in GaN-based Light-emitting Diodes [D] . Zhu, Di. 2011

机译：研究和优化GaN基发光二极管中的载流子传输，载流子分布和效率下降
6. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency [O] . Zi-Hui Zhang, Sung-Wen Huang Chen, Chunshuang Chu, 2018

机译：具有高镁掺杂效率的特别设计的超晶格p型电子阻挡层的几乎无效率下降的基于AlGaN的紫外线发光二极管
7. Investigation of Light-Extraction Efficiency of Flip-Chip AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes Adopting AlGaN Metasurface [O] . Joosun Yun, Hideki Hirayama 2021

机译：倒装芯片基于紫外线发光二极管光提取效率的研究采用AlGAN Metasurface

Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

著录项

引文网络

相似文献

相关主题

期刊订阅