Lateral, high-quality, metal-catalyzed semiconductor growth on amorphous and lattice-mismatched substrates for photovoltaics

摘要

Solar-derived energy is universally available but is not yet cost-competitive. Next generation solar cells are expected to have high efficiencies, associated with single-crystalline semiconductors, at reduced costs, associated with amorphous substrates. Here we report the growth of high-quality semiconductors (Ge and Si) on amorphous and lattice-mismatched substrates using metal-catalyzed, lateral growth. Using this technique, we engineer the location of crystal nucleation, by controlling the catalyst location, and can thus prevent the formation of grain boundaries, typical when crystals grow together. The results presented here provide a foundation upon which next generation photovoltaics may be built.