PO_2 dependant resistance switch effect in highly epitaxial (LaBa)Co_2O_(5+δ) thin films

摘要

Giant resistance switching behavior in mixed conductive (LaBa)Co_2O_(5+δ) epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H_2/96% N_2 to oxygen at temperature range of 400-780 ℃. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of (LaBa)Co_2O_(5+δ) and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature.