Asymmetric ground state spin configuration of transverse domain wall on symmetrically notched ferromagnetic nanowires

摘要

We report that a ground state spin configuration around a notch of ferromagnetic nanowires can have either symmetric or asymmetric transverse domain wall structure depending on the notch geometry by means of micromagnetic simulation with a systematic variation in the notch aspect ratio. An asymmetric off-centered domain wall configuration becomes stable for a certain range of the notch aspect ratio.