机译:锗的气相蚀刻法形成独立的Al_xGa_(1-x)As异质结构
Fakultaet fuer Physik, Universitaet Wien, Boltzmanngasse 5, A-1090 Vienna, Austria;
rnDepartment of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
rnFakultaet fuer Physik, Universitaet Wien, Boltzmanngasse 5, A-1090 Vienna, Austria;
rnDepartment of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
机译:锗气相蚀刻形成的独立AlxGa1-xAs异质结构
机译:在Gaas / al_xga_(1-x)上以Hno_3 + Hcl +甘油混合物的异质结构对金属化层进行液体蚀刻
机译:Al_xga_(1-x)as / gaas / al_xga_(1-x)异位结构的弱定位与静电诱导的随机解毒剂阵列
机译:AL_XGA_(1-X)中的金属有机气相外延在AS / GaAs异质结构中自发地生长超晶格结构的热稳定性研究
机译:硅锗本体合金和应变硅(1-x)锗(x)/硅(1-y)锗(y)异质结构中的电子g因子工程
机译:模板辅助离子束刻蚀的垂直自由定序Pb(Zr0.52Ti0.48)O3纳米杯阵列
机译:100nm-Gaas / al_xGa_ {1-x}扫描霍尔探针的噪声特性