Temperature dependence of electron concentration and mobility in n-GaN measured up to 1020 K

摘要

Temperature dependence of Hall electron concentration and mobility in n-GaN has been measured up to 1020 K. The electron concentration increased monotonically with temperature and did not saturate. The measured values were fitted with the calculated ones for the whole temperature range. It is found that following two assumptions have to be made in order to obtain the best fit for both electron concentration and mobility: (ⅰ) two donor levels and one acceptor level (including dislocation) have to be taken into account; and (ⅱ) one donor level lies in the conduction band. The obtained results in this study will contribute to the design of GaN devices operating at high temperatures.