Distinct electronic switching behaviors of triphenylamine-containing polyimide memories with different bottom electrodes

摘要

A synthetic polyimide poly[4,4'-bis(4-methloxytriphenylamine)-3,3'-biphenylenehexafluoro-isopropylidenediphthalimide] (MTPA-PI) was designed as a functional material for fabrication of memory devices, and two different switching behaviors were observed in the devices with different bottom electrode materials [indium tin oxide (ITO) or Al]. In an ITO/MTPA-PI/Al device, the memory could be switched on/off with the negative/positive voltage with the ON/OFF current ratios in the order of about 10~4, while in an Al/MTPA-PI/Al device, it shows different switching behaviors with much higher current ratios (up to 10~9) as compared with the ITO/MTPA-PI/Al device. The different switching mechanisms based on different bottom electrode devices were also discussed.