Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer

摘要

This paper presents a study on the emission efficiency enhancement of InAsSb nanostructures using a carrier blocking layer. InP is proposed to serve as the carrier blocking layer to suppress the thermal escape of carriers in InAsSb nanostructures and significantly enhance their emission efficiency at high temperature (good photoluminescence signal even at 330 K). However, this leads to a blueshift in their emission wavelength due to the significantly increased quantum confinement of the nanostructures. By inserting a thin InGaAs layer between InP blocking layer and InAsSb nanostructures, longer emission wavelength can be maintained. This provides an approach to achieve InAsSb nanostructures with both good high-temperature optical characteristics and long emission wavelength, which is very useful for fabricating mid-infrared emitters operating at room temperature.