Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer

摘要

This paper presents a study on the emission efficiency enhancement of InAsSb nanostructures usingna carrier blocking layer. InP is proposed to serve as the carrier blocking layer to suppress the thermalnescape of carriers in InAsSb nanostructures and significantly enhance their emission efficiency atnhigh temperature u0002good photoluminescence signal even at 330 Ku0003. However, this leads to a blueshiftnin their emission wavelength due to the significantly increased quantum confinement of thennanostructures. By inserting a thin InGaAs layer between InP blocking layer and InAsSbnnanostructures, longer emission wavelength can be maintained. This provides an approach tonachieve InAsSb nanostructures with both good high-temperature optical characteristics and longnemission wavelength, which is very useful for fabricating mid-infrared emitters operating at roomntemperature. © 2010 American Institute of Physics. u0004doi:10.1063/1.3436562