Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction

摘要

A technique to electrically pump photonic crystal nanocavities using a lateral p-i-n junction is described. Ion implantation doping is used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated and the electrical characteristics of the diode are presented. The fabrication improvements necessary for making an electrically pumped nanocavity laser using a lateral junction are discussed.