机译:金属有机气相外延生长In_(0.17)Al_(0.83)N / GaN异质结构的小价带偏移
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan JST-CREST, Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan;
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan;
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan JST-CREST, Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan;
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;
机译:通过金属机气相外延在几乎晶格匹配的罐谱上生长的C平面AL_(0.83)中的非抗体重组率降低
机译:金属有机气相外延生长的InAIN / GaN异质结构的价带偏移的测量
机译:等离子体辅助分子束外延生长以及缓冲层厚度的变化对Si(111)上超薄In_(0.17)Al_(0.83)N / GaN异质结构形成的影响
机译:金属 - 有机气相外延,气源分子束外延和卤化物气相外延生长GaN的对比光学特征
机译:用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
机译:III型氮化物半导体中II型能带对准的证据:In0.17Al0.83N / GaN异质结构的实验和理论研究
机译:金属有机气相外延生长的In0.17Al0.83N / GaN异质结构的小价带偏移