Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

摘要

The quantum efficiency of GaN-based light-emitting diodes (LEDs) is investigated at temperatures 77-300 K. It is found that the efficiency droop is due to a decrease in the internal quantum efficiency (IQE) in the low-energy part of the emission spectrum. The efficiency starts to decrease at a temperature independent forward voltage of U_(max) ≈ 2.9 V. At this voltage tunneling current through the LED-structure begins to dominate. It is suggested that the external quantum efficiency droop is related to reduction of the IQE due to tunneling leakage of carriers from the quantum well (QW) to defect states in barriers, and to reduction of the injection efficiency by excess tunneling current under QW through deep defect states in barriers.