Si-Ge interdiffusion under oxidizing conditions in epitaxial SiGe heterostructures with high compressive stress

摘要

Si-Ge interdiffusion under oxidizing and inert conditions has been studied in epitaxial relaxed Si_(1-x)Ge_x/compressive Si_(1-y)Ge_y/relaxed Si_(1-x)Ge_x heterostructures. The interdiffusion was measured by secondary ion mass spectroscopy (SIMS) and studied using simulations. Within the SIMS accuracy, the measured Ge profiles show that oxidation has a small effect, if any, on the Si-Ge interdiffusion of these structures. These results suggest that oxidation does not accelerate Si-Ge interdiffusion significantly, which lessens process integration constraints for SiGe devices such as high mobility dual channel metal oxide semiconductor field effect transistors and heterostructure tunneling field effect transistors.