机译:大面积碳纳米管阵列阴极产生的高强度,等离子体诱导的电子发射
Department of Materials Physics, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 People's Republic of China;
Department of Materials Physics, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 People's Republic of China;
Department of Materials Physics, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 People's Republic of China;
Department of Materials Physics, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 People's Republic of China;
Department of Materials Physics, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 People's Republic of China;
Institute of Fluid Physics, Mianyang 621900 People's Republic of China;
Department of Physics, Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, People's Republic of China;
机译:ZnO纳米棒和碳纳米管阵列不同等离子体诱导的电子发射特性的比较研究
机译:大面积ZnO纳米棒阵列阴极的高强度等离子体诱导发射
机译:具有碳纳米管柱阵列阴极的三极管型电子源电子发射的多尺度模拟
机译:ZnO纳米棒和碳纳米管阵列的等离子体诱导电子发射特性研究
机译:用于等离子体热场发射的优化碳纳米管阵列阴极:理论模型和实验验证。
机译:不同形态大面积碳纳米管阵列阴极的等离子体发射特性研究
机译:不同形态大面积碳纳米管阵列阴极的等离子体发射特性研究