机译:基于嵌入式气隙光子晶体的高提取效率发光二极管
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA;
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA;
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA;
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA;
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA;
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA;
School of Engineering and Applied Physics, Harvard University, Cambridge, Massachusetts 02138, USA;
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA Laboratoire de Physique de la Matiere Condensee, CNRS, Ecole Polytechnique, 91128 Palaiseau, France;
机译:高提取效率的基于GaN的光子晶体发光二极管:表面和嵌入式光子晶体之间的提取长度比较
机译:钨纳米掩模形成气隙光子晶体结构的发光二极管的内部量子效率和光提取效率的提高
机译:钨纳米掩模形成的具有气隙光子晶体结构的发光二极管的内部量子效率和光提取效率的提高
机译:通过气隙嵌入式封装提高白色发光二极管的流明效率
机译:改进了III族氮化物可见光和紫外发光二极管的性能,包括提取效率,电效率,热管理和高电流密度下的效率维持。
机译:使用银纳米颗粒嵌入的ZnO薄膜增强InGaN / GaN发光二极管的光提取效率
机译:具有由钨纳米掩模形成的气隙光子晶体结构的发光二极管的内部量子效率和光提取效率