Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors

摘要

A modified transmission-line method (TLM) is proposed to extract the contact resistance from the transistor saturation region. The conventional TLM requires a linear current-voltage characteristic, and this requirement strongly limits its application. In this study, we focused on the pinch-off point of the output characteristics and analyzed the contact resistance using nonlinear output curves. We applied the modified TLM to both p- and n-type rubrene single-crystal transistors and compared the mobility differences in terms of both the intrinsic bandwidth and the extrinsic carrier trap density.