Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy

摘要

We have comparatively studied the effects of electron injection in individual phosphorus-donor potential wells at 13 K and 300 K by Kelvin probe force microscopy in silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. As a result, at 13 K, localized single-electron filling into the phosphorus-donor potential well is found, reflecting single-electron tunneling transport through individual donors, whereas at 300 K, spatially extended and continuous electron filling over a number of phosphorus-donors is observed, reflecting drift-diffusion transport.