Electrical properties and non-volatile memory effect of the [Fe(HB(pz)_3)_2] spin crossover complex integrated in a microelectrode device

摘要

We report on the deposition of thin films of the [Fe(HB(pz)_3)_2] (pz = pyrazolyl) molecular spin crossover complex by thermal evaporation. By means of impedance measurements and Raman microspectroscopy, we show that the films maintain the structure and properties of the bulk material. The conductivity of the films decreases by ca. 2 orders of magnitude when the freshly deposited compound goes through a first (irreversible) thermal phase change above ca. 380 K. This property can be exploited as a non-volatile (read-only) memory effect.