机译:研究InGaZnO薄膜晶体管在DC和AC栅极偏压下由电荷俘获效应引起的退化行为
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
Institute of Electronics, National Chiao Tung University, Hsinchu 30078, Taiwan;
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
Department of Electrical Engineering, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
机译:关于“研究DC和AC栅极偏置偏压下电荷陷阱效应引起的InGaZnO薄膜晶体管退化行为的撤回通知” [Thin Solid Films,528(2013)53-56]
机译:研究直流和交流栅极偏置应力下电荷陷阱效应引起的InGaZnO薄膜晶体管的退化行为
机译:研究具有蚀刻停止层的双栅极a-InGaZnO薄膜晶体管在静态和动态栅极偏置应力下空穴陷阱效应的退化行为
机译:研究直流和交流栅极偏压下电荷陷阱效应引起的InGaZnO薄膜晶体管的退化行为
机译:InGaZnO薄膜晶体管的后处理,以改善偏置照明应力的可靠性。
机译:带有原子层沉积ZnO电荷陷阱层的非晶In-Ga-Zn-O薄膜晶体管存储器的电压极性相关编程行为
机译:非晶InGaZnO薄膜晶体管的精确分析物理模型,说明了陷阱电荷和自由电荷