Charge transport in solution processable polycrystalline dual-gate organic field effect transistors

摘要

Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon~™, e_r=2.1) and bottom (SiO_2, e_r=3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm~2/Vs and bottom gate mobilities >0.1 cm~2/V s were achieved. Temperature dependent mobility measurements show thermally activated charge transport and a comparative analysis is performed in the framework of two models representing polaron hopping as well as hopping in Gaussian density of states (DOS), respectively.