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Influence of Mn dopants on InAs/GaAs quantum dot electronic states

机译：锰掺杂对InAs / GaAs量子点电子态的影响

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摘要

We have investigated the influence of Mn dopants on the electronic states in the vicinity of InAs/ GaAs quantum dots (QDs) and the surrounding GaAs matrix. A comparison of cross-sectional scanning tunneling microscopy, scanning tunneling spectroscopy, and tight binding calculations of the local density of states reveals that the Mn dopants primarily influence the electronic states at the QD edges and the surrounding GaAs matrix. These results suggest that the Mn dopants reside at the QD edge, consistent with the predictions of a thermodynamic model for the nanoscale-size dependence of dopant incorporation in nanostructures.
机译：我们研究了Mn掺杂剂对InAs / GaAs量子点（QDs）和周围的GaAs矩阵附近电子态的影响。横截面扫描隧道显微镜，扫描隧道光谱和状态局部密度的紧密结合计算的比较显示，Mn掺杂剂主要影响QD边缘和周围的GaAs矩阵的电子状态。这些结果表明，Mn掺杂剂位于QD边缘，这与对纳米结构中掺杂剂掺入的纳米级尺寸依赖性的热力学模型的预测一致。

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  • 来源
    《Applied Physics Letters》 |2011年第14期|p.141907.1-141907.3|共3页
  • 作者

    V. D. Dasika; A. V. Semichaevsky; J. P. Petropoulos; J. C. Dibbern; A. M. Dangelewicz; M. Holub; P. K. Bhattacharya; J. M. O. Zide; H. T. Johnson; R. S. Goldman;

  • 作者单位

    Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA,Department of Materials Science and Engineering, University of Michigan, Ann Arbor,Michigan 48109-2136, USA;

    Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign,Urbana, Illinois 61801, USA;

    Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA;

    Department of Materials Science and Engineering, University of Michigan, Ann Arbor,Michigan 48109-2136, USA;

    Department of Materials Science and Engineering, University of Michigan, Ann Arbor,Michigan 48109-2136, USA;

    Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA;

    Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA;

    Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA;

    Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign,Urbana, Illinois 61801, USA;

    Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA,Department of Materials Science and Engineering, University of Michigan, Ann Arbor,Michigan 48109-2136, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 入库时间 2022-08-18 03:17:52

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