Band structures and optical gain of strained GaAS_xP_(1-x-y)N_y/GaP quantum wells

摘要

In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band anticrossing model, we investigated the band structures of fully strained GaAs_xP_(1-x-y)N_y/GaP quantum wells. The GaAs_xP_(1-x-y)N_y could be widely modified to be direct-band gap or indirect-band gap by changing the mole fraction of As and N in the well layer. We found that an increase in the N mole fraction in the well layer increases the TE mode optical gain very slightly.