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Reduced molybdenum oxide as an efficient electron injection layer in polymer light-emitting diodes

机译:还原的氧化钼作为聚合物发光二极管中的有效电子注入层

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摘要

We report a significant improvement in the performance of single layer polymer light-emitting diodes (PLEDs), based on the green emitting copolymer poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(l,4-benzo-{2, 1',3}-thiadiazole)], upon inserting a very thin layer of partially reduced molybdenum oxide (MoO_x, where x = 2.7) at the polymer/Al cathode interface. Both fully oxidized (x = 3) and partially reduced (x = 2.7) thin molybdenum oxide layers were investigated as electron injection layers and their influence on PLED device performance was examined. Improved current density, luminance, and efficiency was achieved only in the case of devices with a thin partially reduced MoO_2.7 film as electron injection layer, as a result of improved electron injection and more facile transfer at the modified polymer/Al interface.
机译:我们报告基于绿色发光共聚物聚[(9,9-二辛基芴基-2,7-二基)-co-(1,4-苯并)的单层聚合物发光二极管(PLED)的性能有了显着改善。 -{2,1',3}-噻二唑)],在聚合物/ Al阴极界面处插入非常薄的部分还原的氧化钼薄层(MoO_x,x = 2.7)。研究了完全氧化(x = 3)和部分还原(x = 2.7)的氧化钼薄层作为电子注入层,并研究了它们对PLED器件性能的影响。由于在改进的聚合物/ Al界面上改善了电子注入并实现了更轻松的传输,因此仅在具有薄部分还原的MoO_2.7薄膜作为电子注入层的器件中,才能实现改善的电流密度,亮度和效率。

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  • 来源
    《Applied Physics Letters》 |2011年第12期|p.123301.1-123301.3|共3页
  • 作者单位

    Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou,15310 Aghia Paraskevi, Greece;

    Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou,15310 Aghia Paraskevi, Greece,Department of Physics, University of Patras, 26500 Patras, Greece;

    Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou,15310 Aghia Paraskevi, Greece;

    Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou,15310 Aghia Paraskevi, Greece;

    Department of Chemical Engineering, University of Patras, 26500 Patras, Greece;

    Department of Chemical Engineering, University of Patras, 26500 Patras, Greece;

    Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou,15310 Aghia Paraskevi, Greece,Department of Electronics, Technological and Educational Institute of Pireaus, 12244 Aegaleo, Greece;

    Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou,15310 Aghia Paraskevi, Greece;

    Department of Information and Communication Systems Engineering, University of the Aegean,83200 Karlovassi, Greece;

    Department of Information and Communication Systems Engineering, University of the Aegean,83200 Karlovassi, Greece,Department of Electrical and Computer Engineering, University of Maryland, College Park,Maryland 20742, USA;

    Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou,15310 Aghia Paraskevi, Greece;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:17:51

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