Nearly lattice-matched InAIN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition

摘要

We report on a growth of nearly lattice-matched InAIN/GaN heterostructures on 4H-SiC substrates by pulsed metal organic chemical vapor deposition, and an excellent device characteristic of high electron mobility transistors (HEMTs) fabricated on these InAIN/GaN heterostructures. The electron mobility is 1032 cm~2/V s together with a high two-dimensional-electron-gas density of 1.59 × 10~(13) cm~(-2)2 for the In_(0.17)Al_(0.83)N/AlN heterostructures. HEMTs with gate dimensions of 0.5 ×50 μm~2 and 3 μm source-drain distance exhibits a maximum drain current of 1 A/mm, a maximum extrinsic transconductance of 310 mS/mm, and current gain and maximum oscillation cutoff frequencies of 18 GHz and 39 GHz, respectively.