机译:电阻面积积对基于MgO的磁性隧道结存储单元中自旋转移转换的影响
Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
Department of Physics and Astronomy, University of California, Irvine, California 96297, USA;
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis,Minnesota 55455, USA;
Department of Physics and Astronomy, University of California, Irvine, California 96297, USA;
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis,Minnesota 55455, USA;
Hitachi Global Storage Technologies, San Jose, California 95135, USA;
Singulus Technologies, Kahl am Main 63796, Germany;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA;
机译:具有铁磁和反铁磁耦合的合成自由层的基于MgO的磁性隧道结中的热稳定性和自旋转移转换
机译:基于FePt / MgO的垂直磁性隧道结中自旋传递转矩切换的建模:从头算和微磁模拟的组合研究
机译:纳秒状态下自旋传递转矩驱动的基于MgO的磁性隧道结器件的开关特性
机译:旋转扭矩二极管效应在MgO的磁隧道结中分析旋转转移切换分析的应用
机译:垂直磁各向异性材料和磁隧道结的切换研究
机译:通过在垂直磁隧道结中结合电场和自旋转移转矩效应进行磁化切换
机译:基于CoFeB / mgO的垂直磁隧道结中的电场和自旋转移力矩效应