机译:绝缘子上的单晶(100)Ge网络通过沿六角形网格图形的快速熔化生长
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
机译:网格形状和大小可控的快速熔化生长,可在绝缘子上形成单晶(100),(110)和(111)Ge网络
机译:通过隔离控制的快速熔化生长在绝缘体结构上的单晶横向渐变GeSn
机译:通过隔离控制的快速熔化生长在绝缘体结构上的单晶横向渐变GeSn
机译:利用RTA技术通过SiGe混合触发快速熔化生长在Si平台上形成绝缘体上Ge的结构
机译:金属绝缘体 - 金属装置的单层六边形氮化硼膜的分子束外延生长
机译:六方氮化硼在硅烷上催化大型单晶石墨烯的快速生长
机译:通过增长方向选择的快速熔化生长(100),(110)和(111)取向的无缺陷Ge-On-Insululator