机译:扩展Thue-Morse非周期性间隙石墨烯超晶格的全向电子间隙
Department of Physics, Tongji University, Shanghai 200092, People's Republic of China;
Department of Physics, Tongji University, Shanghai 200092, People's Republic of China;
Department of Physics, Tongji University, Shanghai 200092, People's Republic of China;
Department of Physics, Tongji University, Shanghai 200092, People's Republic of China;
Faculty of Science, China University of Mining and Technology, Beijing 100083, People's Republic of China;
Department of Physics, Tongji University, Shanghai 200092, People's Republic of China;
机译:扩展Thue-Morse非周期性间隙石墨烯超晶格的全向电子间隙
机译:Thue-Morse序列非周期性双层石墨烯超晶格中的电子带隙和输运性质
机译:Thue-Morse序列非周期性双层石墨烯超晶格中的电子带隙和输运性质
机译:Si / SiO_2 Thue-Morse准晶体的全向反射率和光隙特性
机译:短程杂质在带隙石墨烯中的中能隙态
机译:石墨烯超晶格的Dirac锥移动和带隙开/关切换
机译:非周期双层中的电子带隙和传输特性 Thue-morse序列的石墨烯超晶格
机译:Inalp / InGap应变调制非周期超晶格异质载体,用于增强可见光(Lamba约650 nm)发光器件中的电子限制