Transparent p-type AlN:SnO_2 and p-AlN:Sn02-SnO_2:In_2O_3 p-n junction fabrication

摘要

This study produced transparent p-type AlN-doped SnO_2 thin films by annealing sputtered sandwich SnO_2/AlN/SnO_2 thin films. Both Al~(3+)-Sn~(4+) and N~(3-)O~(2-) substitution reactions-which are the main sources for the hole carriers-were identified by XPS analysis. The hole concentration of the p-type AlN:SnO_2 thin films was as high as 1.074 × 10~(19)cm~(-3). Using the produced p-AlN:SnO_2 thin film, transparent p-AlN:SnO_2-SnO_2:In_2O_3 p-n junctions were fabricated and characterized as follows: (1) A low leakage current (2.97 × 10~(-5) A at -5 V); (2) a 2.17 eV turn-on voltage; and (3) a low ideality factor (12.2).