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Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer

机译:具有石墨烯电流扩散层的有序ZnO纳米棒基异质结发光二极管

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摘要

Ordered ZnO nanorods-based heterojunction light-emitting diodes (LEDs) have been fabricated by adopting few-layer graphene as a current spreading layer. The strong emission at low currents infers the high interfacial quality between GaN and ordered ZnO nanorods, and the current spreading effect resulting from graphene. The improved electroluminescence performance was achieved compared to the ZnO nanorods-based LED with a conventional indium-tin-oxide electrode, which can be attributed to the stable, reliable, and low resistance ohmic-contacts between graphene and ZnO nanorods, as well as the high transmittance of graphene. These results demonstrate feasibility of using graphene as electrodes for high-efficiency ZnO nanorods-based LEDs.
机译:通过采用几层石墨烯作为电流扩散层,已经制造出有序的基于ZnO纳米棒的异质结发光二极管(LED)。低电流下的强发射可推断GaN与有序ZnO纳米棒之间的高界面质量,以及由石墨烯产生的电流扩展效应。与具有常规铟锡氧化物电极的基于ZnO纳米棒的LED相比,可以实现改善的电致发光性能,这可以归因于石墨烯和ZnO纳米棒之间以及稳定的,可靠的和低电阻的欧姆接触。石墨烯的高透射率。这些结果证明了使用石墨烯作为高效ZnO纳米棒基LED的电极的可行性。

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  • 来源
    《Applied Physics Letters》 |2012年第12期|p.121104.1-121104.4|共4页
  • 作者单位

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing J 00083, People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing J 00083, People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing J 00083, People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing J 00083, People's Republic of China;

    Semiconductor Lighting Technology R&D Center, Institute of Semiconductors, CAS, Beijing 100083, People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing J 00083, People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing J 00083, People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing J 00083, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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