Effect of electrode materials on the scaling behavior of energy density in Pb(Zr_(0.96)Ti_(0.03))Nb_(0.01)O_3 antiferroelectric films

摘要

Antiferroelectric Pb(Zr, Nb, Ti)O_3 (PZNT) films were deposited via a sol-gel process on Pt(111)/ Ti/SiO_2/Si, LaNiO_3- and Lao.5Sr_(0.5)CoO_3-buffered Si substrate. The scaling behavior of the energy density W of antiferroelectric films was investigated. The scaling behavior of W against frequency/ of PZNT on LaNiO3-buffered Si takes the form of W_∝/~(0.08), which differs significantly from that form of W_ ∝/~(-0.14) of PZNT on La_(0.5)Sr_(0.5)CoO_3-buffered Si. This indicates that the scaling relations of W vary substantially as bottom electrodes change and might be closely related to the variation of nonuniform strain field and depolarization field within the AFE films.