机译:在GaAs上生长的lnP_(0.52)Sb_(0.48)的键长和晶格结构
Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
机译:GaAs上生长的InP0.52Sb0.48的键长和晶格结构
机译:In_0.53Ga_0.47As / GaAs_0.5Sb_0.5 / In_0.52Al_0.48As与分子束外延生长的InP晶格匹配的非对称II型量子阱结构
机译:在GaAs衬底上生长的In_0.52Al_0.48As / In_0.60Ga_0.40As双异质结构伪高电子迁移率晶体管的低频噪声特性
机译:Al / sub 0.48 / In / sub 0.52 / As / Ga / sub 0.47 / In / sub 0.53 / As的生长异质结构在GaAs上弛豫并在InP上匹配
机译:镧锶锰(LA0.67SR0.33MNO3)和锆钛酸铅(PBZR0.52TI0.48O3)薄膜异质结构中的自极化感应磁电耦合
机译:InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
机译:不相溶的合金In0.52Al0.48As的层厚对In0.52Al0.48As / InP(001)上生长的InAs纳米结构形态的影响
机译:亚微米栅极In(0.52)al(0.48)as / In(0.53)Ga(0.47)as / In(0.52)al(0.48)的低频和微波表征作为分子生长的异质结金属半导体场效应晶体管光束外延。