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机译:GeO_x膜中使用铜纳米丝的可重复单极/双极电阻存储特性和转换机制
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University,Tao-Yuan, Taiwan 333, Taiwan;
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University,Tao-Yuan, Taiwan 333, Taiwan;
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
机译:GeOx膜中使用铜纳米丝的可重复单极/双极电阻存储特性和转换机制
机译:Cu / Tao_x / PT电阻器件中Cu和氧空位纳丝纳丝的双极和单极切换的共存
机译:统一的开关机制,用于氧化物电阻开关存储器件的单极性和双极性切换模式之间的可逆转换
机译:铜和氧空位纳米丝的Cu / TaO_x / Pt电阻器件中双极和单极开关的共存
机译:金属电极镨钙锰三氧化钙界面双极场诱导电阻切换的载体跳跃机制
机译:使用ZnO薄膜的电阻式开关存储器件的可靠性特性和导电机理
机译:使用ZnO薄膜的电阻式开关存储器件的可靠性特性和导电机理