机译:II型CdSe / CdTe超晶格的光致发光研究
Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706, USA, School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706, USA;
Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706, USA, Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;
Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706, USA,School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706, USA;
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706, USA;
Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706, USA,School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706, USA;
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706, USA, School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706, USA;
Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706, USA, School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706, USA;
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706, USA, School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706, USA;
机译:II型CdSe / CdTe超晶格的光致发光研究
机译:CDTE / CDTESE / CDSE核心/合金/壳型II型量子点的光致发光性能
机译:CdSe / CdTe倒置II型和CdTe / CdSe II型核/壳纳米晶体的斯托克斯位移和精细结构分裂:原子紧密结合理论
机译:INAS / INASSB II型超晶格中载体重组过程的光致发光研究
机译:高效中带太阳能电池II型亚单层ZnCdTe / ZnCdSe量子点超晶格的生长和表征。
机译:基于氯化物处理的CdTe / CdSe II型量子点的高效近红外发光二极管
机译:II型Cdse / CdTe超晶格的光致发光研究
机译:最终报告:研究领域4:电子学:使用压力相关光致发光研究Inas / Inassb II型超晶格中的缺陷水平。