Magnetic Schottky diode exploiting spin polarized transport in Co/p-Si heterostructure

摘要

Magnetic Schottky heterojunction fabricated from Co/p-Si is investigated. The diode showed proper rectifying property at all temperatures and evolution of a giant positive junction magnetoresistance is observed at temperatures below 50 K. Based on a simplified band structure, the spin polarization of the device is determined to be ～31% at 10 K. A phenomenological model is proposed to explain the observed spintronic behavior of the device.