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首页> 外文期刊>Applied Physics Letters >Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters
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Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters

机译：单光子发射器的InAs / GaAs纳米点量子点的位置控制形成

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摘要

We report the demonstration of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InAs/GaAs quantum-dot-in-nanowires (QD-in-NWs) with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton line width of 87 μeV are observed. Light emission from the single QD-in-NW shows photon antibunching, along with biexciton-exciton cascaded emission process, which evidences single photon emission from high-quality QD-in-NWs.
机译：我们报告了通过选择性金属有机化学气相沉积在GaAs纳米线（NWs）中嵌入的站点控制InAs / GaAs量子点（QD）的演示。具有各种InAs厚度的InAs / GaAs纳米点量子线（QD-in-NWs）以InAs / GaAs异质结构的形式在图案化的GaAs（111）B衬底上实现，并通过结构分析使用扫描透射电子显微镜和光致发光特性。观察到来自单个QD-in-NW的10 K处的尖峰激子发射峰，其最窄的激子线宽为87μeV。单个QD-in-NW的发光显示出光子反聚束，以及双激子-激子级联发射过程，这表明来自高质量QD-in-NWs的单个光子发射。

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  • 来源
    《Applied Physics Letters》 |2012年第26期|p.263101.1-263101.4|共4页
  • 作者

    J. Tatebayashi; Y. Ota; S. Ishida; M. Nishioka; S. Iwamoto; Y. Arakawa;

  • 作者单位

    NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;

    NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;

    NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan,Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;

    NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan,Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;

    NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan,Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;

    NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan,Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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